HY29DS163 memory
(hy29ds162 / hy29ds163) simultaneous read/write flash memory.(hy29ds162 / hy29ds163) simultaneous read/write flash memory.
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− Read, program, and erase operations from 1.8 to 2.2 V (2.0V ± 10%) − Ideal for battery-powered applications.
Simultaneous Read/Write Operations − Host system can program or erase in one bank while simultaneously reading from any .
The HY29DS162/HY29DS163 (HY29DS16x) is a 16 Mbit, 1.8 volt-only CMOS Flash memory organized as 2,097,152 (2M) bytes or 1,048,576 (1M) words. The device is available in 48-pin TSOP and 48-ball FBGA packages. Word-wide data (x16) appears on DQ[15:0] an.
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